ECE 59500 - Semiconductor Memory Technologies and Applications

Course Details

Lecture Hours: 3 Credits: 3

Areas of Specialization:

  • VLSI and Circuit Design
  • Microelectronics and Nanotechnology

Counts as:

  • EE Elective
  • CMPE Selective - Special Content

Normally Offered:

Each Fall

Campus/Online:

On-campus and online

Requisites:

ECE 30500 [May be taken concurretly] OR (ECE 50631 and ECE 50632 and ECE 50633) [May be taken concurretly]

Requisites by Topic:

Basic understanding of semiconductors

Catalog Description:

This course introduces students to the field of semiconductor memory technologies, which plays an increasingly important role in modern applications. It provides detailed insights into device and circuit fundamentals for SRAM, DRAM (planar DRAM, eDRAM, 3D HBM), Flash (NAND/NOR, 3D V-NAND), and emerging non-volatile memories (RRAM, PCM, MRAM, FeRAM/FeFET). The course will cover technology and scaling trends, along with a wide spectrum of case studies on modern applications such as edge computing, machine learning acceleration, HPC scientific computing, datacenter applications, hardware security, brain-inspired computing, and space electronics.

Required Text(s):

None.

Recommended Text(s):

None.

Learning Outcomes

A student who successfully fulfills the course requirements will have demonstrated:

  • an ability to analyze and compare the fundamental principles of SRAM, DRAM, Flash, and emerging memory technologies, including their circuit and device-level operation
  • an ability to evaluate trade-offs in memory design, considering factors such as scalability, power, performance, and reliability, and apply engineering design principles to meet system-level requirements
  • an ability to communicate technical findings related to semiconductor memory technologies through written reports, presentations, and collaborative discussions
  • an ability to design and conduct device/circuit simulations to evaluate memory performance and interpret results using engineering judgment
  • an ability to acquire and apply new knowledge as needed, using appropriate learning strategies to stay updated on emerging memory trends such as advanced packaging for 3D memories, or semiconductor memories in extreme environments such as space

Lecture Outline:

Week Week
1 Introduction, memory technology landscape, course project formation
2 SRAM: cell operations, design & fabrication considerations
3 SRAM: variability and reliability, scaling trends
4 DRAM: device technologies, operation basics
5 DRAM circuit and memory banks
6 Embedded DRAM (eDRAM) and 3D high-bandwidth memory (HBM)
7 Flash: physical mechanisms, operations
8 Flash: NAND/NOR types, reliability
9 Flash scaling trends, 3D Vertical NAND. Midterm exam.
10 Intro to emerging non-volatile memories (NVMs), Phase change memory (PCM)
11 Resistive RAM (RRAM), selector devices, array architectures
12 Conductive-bridge RAM (CBRAM), Magnetic RAM (MRAM)
13 Ferroelectric RAM (FeRAM) and Ferroelectric FETs (FeFET)
14 In-memory computing
15 Modern/exploratory applications (case studies), project presentations

Assessment Method:

Homework, presentations, projects, exams (4/2025)