ECE 65000 - Introduction to Computational Nanoelectronics - From Quantum Mechanics and Atoms to Realistic Devices

Credits: 1

Areas of Specialization(s):

Counts as:

Normally Offered: Every other Fall

ECE 45300 or ECE 65900, graduate standing, consent of instructor required

Requisites by Topic:
Familiarity with differential equations, matrix operations

Catalog Description:
The goal of this course is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to the understanding of nanoelectronic devices will be explored: 1) open systems vs. closed systems, 2) non-equilibrium systems vs. close-to equilibrium systems, and 3) atomistic material representation vs. continuum matter representation.

Required Text(s): None.

Recommended Text(s):
  1. Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices, Gerhard Klimeck,, 2010.

Lecture Outline:

Period Major Topics
1 Lecture 01: Overview
1 Lecture 02: (NEMO) Motivation and Background Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these...
1 Lecture 03: - Online Simulation and More This presentation provides a brief overview of the nanoHUB capabilities, compares it to static web page delivery, highlights its technology basis, and provides a vision for future...
1 Lecture 07: Introduction to Bandstructure Engineering I This presentation serves as a reminder about basic quantum mechanical principles without any real math. The presentation reviews critical properties of classical systems that can be described as...
1 Lecture 08: Introduction to Bandstructure Engineering II This presentation provides a brief overview of the concepts of bandstructure engineering and its potential applications to light detectors, light emitters, and electron transport devices. ...
1 Lecture 09: Open 1D Systems - Reflection at and Transmission over 1 Step One of the most elemental quantum mechanical transport problems is the solution of the time independent Schr??dinger equation in a one-dimensional system where one of the two half spaces has a...
1 Lecture 10: Open 1D Systems - Transmission through & over 1 Barrier Tunneling and interference are critical in the understanding of quantum mechanical systems. The 1D time independent Schr??dinger equation can be easily solved analytically in a scattering matrix...
1 Lecture 11: Open 1D Systems - The Transfer Matrix Method The transfer matrix approach is analytically exact, and ???arbitrary??? heterostructures can apparently be handled through the discretization of potential changes. The approach appears to be...
1 Lecture 12: Open 1D Systems - Transmission through Double Barrier Structures - Resonant Tunneling This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a...
1 Exercises 1-3 - Barrier Structures, RTDs, and Quantum Dots
1 Lecture 14: Open 1D Systems - Formation of Bandstructure The infinite periodic structure Kroenig Penney model is often used to introduce students to the concept of bandstructure formation. It is analytically solvable for linear potentials and shows...
1 Lecture 16: Introduction to RTDs - Realistic Doping Profiles Realistic RTDs need extremely high doping to provide enough carriers for high current densities. However, Impurity scattering can destroy the RTD performance. The dopants are therefore typically...
1 Lecture 17: Introduction to RTDs - Relaxation Scattering in the Emitter Realistic RTDs will have nonlinear electrostatic potential in their emitter. Typically a triangular well is formed in the emitter due to the applied bias and the emitter thus contains discrete...
1 Lecture 18: Introduction to RTDs - Quantum Charge Self-Consistency (Hartree) In this semi-classical charge and potential model the quantum mechanical simulation is performed once and the quantum mechanical charge is in general not identical to the semi-classical charge.
1 Lecture 19: Nanoelectronic Modeling Introduction to RTDs - Asymmetric Structures This lecture explores this effect in more detail by targeting an RTD that has a deliberate asymmetric structure. The collector barrier is chosen thicker than the emitter barrier. With this...
1 Lecture 20: NEGF in a Quasi-1D Formulation This lecture will introduce a spatial discretization scheme of the Schr??dinger equation which represents a 1D heterostructure like a resonant tunneling diode with spatially varying band edges and...
1 nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF
1 nanoHUB Demo 2: RTD simulation with NEGF
1 Lecture 21: Recursive Green Function Algorithm The Recursive Green Function (RGF) algorithms is the primary workhorse for the numerical solution of NEGF equations in quasi-1D systems. It is particularly efficient in cases where the device is...
1 Lecture 22: NEMO1D - Motivation, History and Key Insights
1 Lecture 23: NEMO1D - Importance of New Boundary Conditions
1 Lecture 24: NEMO1D - Incoherent Scattering
1 Lecture 25a: NEMO1D - Full Bandstructure Effect quantitative RTD modeling at room temperature)
1 Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport
1 Lecture 26: NEMO1D
1 Lecture 27: NEMO1D
1 Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
1 Lecture 29: Introduction to the NEMO3D Tool
1 Lecture 31a: Long-Range Strain in InGaAs Quantum Dots
1 Lecture 32: Strain Layer Design through Quantum Dot TCAD
1 Lecture 33: Alloy Disorder in Bulk
1 Lecture 34: Alloy Disorder in Quantum Dots
1 Lecture 35: Alloy Disorder in Nanowires
1 Lecture 39: Band-to-Band-Tunneling Transistors This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors.
1 Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
1 Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT