ECE 695A - Reliability Physics of Nanoelectronic Devices
Course Details
Lecture Hours: 3 Credits: 3
Counts as:
Experimental Course Offered:
Spring 2009
Catalog Description:
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied. However, as transistors are turned on and off trillions of times during the years of the operation, gradually defect accumulates within the device so that at some point the transistor does not work anymore. The course will explore the physics and mathematics regarding how and when things break a topic of great interest to semiconductor industry
Required Text(s):
None.
Recommended Text(s):
- Advanced Semiconductor Fundamentals , 2nd Edition , R. F. Pierret , Prentice Hall , ISBN No. 0-13-061792-X
- Fundamentals of Modern VLSI Devices , Yuan Taur and Tak H. Ning , Cambridge University Press , 1998 , ISBN No. 0521550564
- Semiconductor Material and Device Characterization , D.K. Schroeder , John Wiley & Sons , ISBN No. 0-471-73906-5
Lecture Outline:
| Lectures | Topics |
|---|---|
| 5 | Reliability of Modern Semiconductor Devices |
| 5 | Mathematics of Reliability |
| 4 | Reliability of Modern Semiconductor Devices |
| 6 | Theory and Practice of General Characterization Techniques |
| 6 | Transistor Degradation: Negative Bias Temperature Instability |
| 5 | Time-Dependent Dielectric Breakdown |
| 5 | Transistor Reliability: Hot Carrier Degradation |
| 3 | Radiation Damage in Semiconductor Devices |
| 3 | ESD Damage in Semiconductor Devices |
| 3 | Concluding Lectures |
Assessment Method:
none