ECE 695V - High-speed Semiconductor Devices
Course Details
Lecture Hours: 3 Credits: 3
Counts as:
Experimental Course Offered:
Fall 2008
Catalog Description:
As semiconductor device geometry miniaturizes, the device becomes faster and some devices move into the quantum-effect region. These higher-speed devices are the key components for future electronic systems in communications, computers, control, and consumer applications. This course covers the physics and operational principles of these devices to meet the needs of microelectronics in the 21st century. This course emphasizes the integration of the state-of-the-art technologies such as high-k dielectrics, SiGe, SiC and GaN devices. This course is intended for graduate students in science and engineering who are either i) interested in pursuing research in semiconductor materials, structures, or devices, or ii) seeking the broad device background on the state-of-the-art technologies for a future R&D career in the microelectronic industry.
Required Text(s):
None.
Recommended Text(s):
- High-speed Semiconductor Devices , S. M. Sze
Lecture Outline:
| Week | |
|---|---|
| 1 | Overview of Modern Semiconductor Devices Semiconductor Epitaxial Growth (MBE and MOCVD) |
| 2 | Chemical Vapor Deposition (CVD); Atomic Layer Deposition (ALD); High-k dielectrics for ultimate CMOS |
| 3 | Homogeneous Field-Effect Transistors (III-V MESFET); Homogeneous Field-Effect Transistors (III-V MESFET and JFET) |
| 4 | Heterostructure Field-Effect Transistors (III-V HFET); Heterostructure Field-Effect Transistors (III-V HEMT) |
| 5 | Discussion on III-V MOSFET Research; Discussion on GaN HEMT Research |
| 6 | Bipolar Transistor Operation, Silon Bipolar Transistor, Heterojunction Bipolar Transistor (III-V HBT) |
| 7 | Scaled MOSFETs, CMOS/Bi CMOS, Strain-Si and SiGe based MOSFETs |
| 8 | Discussion on Ge MOSFET Research; Discussion on CNTFET Research |
| 9 | Power MOSFET, Si LDMOSFET |
| 10 | SiC Power Devices, GaN Power Devices |
| 11 | Quantum-Effect Devices (Resonant-Tunneling Diodes and RTBTs), Hot-Electron Devices |
| 12 | Discussion on Single-Electron-Transistors (SET) and Quantum Dots Research Active Microwave Devices |
| 13 | Discussion on THz transistor Research (i.e. UIUC work), High-Speed Photonic Devices (LED, Pin Photodetector, Avalanche Photodetector) |
| 14 | High-Speed Photonic Devices (Laser), Discussion on VCSEL Research |
| 15 | Review, Final Exam |
Assessment Method:
none