ECE 695C - High-Speed Semiconductor Devices
Course Details
Lecture Hours: 3 Credits: 3
Counts as:
Experimental Course Offered:
Spring 2007
Catalog Description:
As semiconductor device geometry miniaturizes, the device becomes faster and some devices move into the quantum-effect region. These higher-speed devices are the key components for future electronic systems in communications, computers, control, and consumer applications. This course covers the physics and operational principles of these devices to meet the needs of microelectronics in the 21st century. This course emphasizes the integration of the state-of-the-art technologies such as high-k dielectrics, SiGe devices, SiC and GaN based power devices.
Course Objectives:
This course is intended for graduate students in MN and related areas who are either i) interested in pursuing research in semiconductor materials, structures or devices, or ii) seeking the broad device background on the-state-of-the-art technologies for a future R&D career in the microelectronic industry.
Required Text(s):
None.
Recommended Text(s):
- Class Notes
Lecture Outline:
| Week | Lecture Topics |
|---|---|
| 1 | Overview of Modern Semiconductor Devices; Semiconductor Epitaxial Growth (MBE and MOCVD) |
| 2 | Chemical Vapor Deposition (CVD); Atomic Layer Deposition (ALD); High-k dielectrics for ultimate CMOS |
| 3 | Homogeneous Field-Effect Transistors (III-V MESFET and JFET) |
| 4 | Heterostructure Field-Effect Transistors (III-V HFET and HEMT) |
| 5 | Heterostructure Field-Effect Transistors (III-V HFET and HEMT) |
| 6 | Bipolar Transistors (III-V HBT) |
| 7 | Hot-Electron Transistors (ballistic-Injection Devices and Real-Space Transfer Devices) |
| 8 | Si CMOS ultimate scaling; Silicon-on-insulator (SOI) MOSFET |
| 9 | SiGe MOSFET; Ge MOSFET |
| 10 | Quantum-Effect Devices (Resonant-Tunneling Diodes and RTBTs) |
| 11 | Single-Electron-Transistors (SET) and Quantum Dots |
| 12 | SiC based power switch; Si LD MOSFET |
| 13 | GaN based RF/microwave power devices |
| 14 | High-Speed Photonic Devices (LED, Pin Photodetector, Avalanche Photodetector) |
| 15 | High-Speed Photonic Devices (Laser, VCSEL) |
Assessment Method:
none