Up to 6 graduate research assistantships are available in the area of advanced silicon carbide (SiC) power devices. SiC is a wide bandgap semiconductor with a high critical field, making it an exciting material for power electronic devices. SiC MOSFETs are now commercially available, but do not yet achieve their full potential. We are approaching this problem from several directions, including a radical new device geometry inspired by modern FinFETs, the adaptation of Super-Junctions for use in SiC devices, the use of high-k gate dielectrics, and a novel technique for reducing substrate resistance.

 

Research activities will include semiconductor device process development (including sub-micron lithography and deep reactive ion etch), complete device fabrication, electrical characterization and modeling, and 3D device simulations.

 

Requirements: Must be enrolled as a student in the ECE graduate program at Purdue. A familiarity with basic semiconductor physics, or previous experience in device fabrication or characterization is desirable.

 

For more information or to apply, send resume and contact information to:

 

Dallas Morisette

Research Assistant Professor

morisett@purdue.edu