ECE 696 Advanced Project Research Opportunity

 

Evaluation of SiC Power Integrated Circuits

 

We are looking for a student to help with a short term project, evaluating the performance of simple CMOS integrated circuits embedded within a silicon carbide (SiC) power MOSFET process.  SiC is a wide bandgap semiconductor with a high critical field, making it a promising material for power electronic devices. Discrete SiC power MOSFETs are now commercially available, but typically suffer from a very limited short circuit withstand time, making it difficult to build robust gate driver circuits that can protect systems from temporary short conditions. 

 

This project seeks to solve this problem by adding CMOS integrated circuit technology to the process used to fabricate these vertical power devices. This would enable the development of “smart" power devices which can detect a short condition and rapidly shut down or limit current flow before damage occurs. The project involves making electrical measurements of fabricated devices to evaluate the performance of simple SiC CMOS logic gates and transistors to aid in improving the fabrication process and IC design.

 

For more information, please contact:

Dallas Morisette

Research Assistant Professor

Electrical and Computer Engineering

Birck Nanotechnology Center

morisett@purdue.edu