{"id":500,"date":"2017-11-04T15:29:28","date_gmt":"2017-11-04T15:29:28","guid":{"rendered":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/?p=500"},"modified":"2017-11-04T15:29:28","modified_gmt":"2017-11-04T15:29:28","slug":"y-jing-s-leach-re-garcia-je-blendell-correlated-inter-grain-switching-in-polycrystalline-ferroelectric-thin-films-journal-of-applied-physics-11612124102-2014","status":"publish","type":"post","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/y-jing-s-leach-re-garcia-je-blendell-correlated-inter-grain-switching-in-polycrystalline-ferroelectric-thin-films-journal-of-applied-physics-11612124102-2014\/","title":{"rendered":"Y Jing, S Leach, RE Garc\u00eda, JE Blendell “Correlated inter-grain switching in polycrystalline ferroelectric thin films.”\u00a0Journal of Applied Physics, 116(12):124102, 2014."},"content":{"rendered":"

Y Jing, S Leach, RE Garc\u00eda, JE Blendell “Correlated inter-grain switching in polycrystalline ferroelectric thin films<\/a>.”\u00a0Journal of Applied Physics<\/strong>, 116(12):124102, 2014.<\/p>\n

Abstract<\/h3>\n
\n
Ferroelectric domain switching within individual nanoscale grains of a 100\u2009nm thick polycrystalline PbZr0.2<\/sub>Ti0.8<\/sub>O3<\/sub> thin film has been shown to depend on the relative crystallographic orientation of the adjacent grains. Using Piezoresponse Force Microscopy,the significance of local microstructure on the domain switching was demonstrated. Different regions within grains show different coercive fields under the same external electric field. In addition, neighboring grains also show a collective switching pattern, facilitating\/suppressing switching on both sides of the grain boundaries compared to the center of the grain. These experimental observations were supported by numerical simulation demonstrating that changing the crystallographic orientation of a grain affects the switching loop of the neighboring grains. Based on both experimental and numerical simulation, the conclusion can be made that microstructural modulation of the local electric and stress field can significantly affect individual grain switching in polycrystalline thin films.<\/div>\n<\/div>\n
<\/div>\n","protected":false},"excerpt":{"rendered":"

Y Jing, S Leach, RE Garc\u00eda, JE Blendell “Correlated inter-grain switching in…<\/p>\n

Continue reading “Y Jing, S Leach, RE Garc\u00eda, JE Blendell “Correlated inter-grain switching in polycrystalline ferroelectric thin films.”\u00a0Journal of Applied Physics, 116(12):124102, 2014.”<\/span>…<\/a><\/div>\n
Continue reading \"Y Jing, S Leach, RE Garc\u00eda, JE Blendell “Correlated inter-grain switching in polycrystalline ferroelectric thin films.”\u00a0Journal of Applied Physics, 116(12):124102, 2014.\"<\/span>…<\/a><\/div>","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"advanced_seo_description":"","jetpack_publicize_message":"","jetpack_is_tweetstorm":false,"jetpack_publicize_feature_enabled":true},"categories":[45],"tags":[11,10,14,16],"jetpack_publicize_connections":[],"jetpack_featured_media_url":"","jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/peeeSR-84","jetpack_likes_enabled":true,"jetpack-related-posts":[{"id":346,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/virtual-piezoforce-microscopy-of-polycrystalline-ferroelectric-films\/","url_meta":{"origin":500,"position":0},"title":"RE Garc\u00eda, BD Huey, JE Blendell “Virtual piezoforce microscopy of polycrystalline ferroelectric films.”\u00a0Journal of applied physics, 100:064105, 2006.","date":"10\/31\/2017","format":false,"excerpt":"RE Garc\u00eda, BD Huey, JE Blendell \"Virtual piezoforce microscopy of polycrystalline ferroelectric films.\"\u00a0Journal of applied physics, 100:064105, 2006. Abstract An innovative methodology is presented that utilizes the experimental results of electron backscattered diffraction to map the crystallographic orientation of each grain, the finite element method to simulate the local grain-grain\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":385,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/collective-dynamics-in-nanostructured-polycrystalline-ferroelectric-thin-films-using-local-time-resolved-measurements-and-switching-spectroscopy\/","url_meta":{"origin":500,"position":1},"title":"S Wicks, K Seal, S Jesse, V Anbusathaiah, S Leach, RE Garc\u00eda, S V Kalinin, V Nagarajan “Collective dynamics in nanostructured polycrystalline ferroelectric thin films using local time-resolved measurements and switching spectroscopy.” \u00a0Acta Materialia. 58(1):67-75, 2010.","date":"10\/31\/2017","format":false,"excerpt":"S Wicks, K Seal, S Jesse, V Anbusathaiah, S Leach, RE Garc\u00eda, S V Kalinin, V Nagarajan \"Collective dynamics in nanostructured polycrystalline ferroelectric thin films using local time-resolved measurements and switching spectroscopy.\" \u00a0Acta Materialia. 58(1):67-75, 2010. Abstract Grain-to-grain long-range interactions and the ensuing collective dynamics in the domain behavior of\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":361,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/domain-switching-mechanisms-in-polycrystalline-ferroelectrics-with-asymmetric-hysteretic-behavior\/","url_meta":{"origin":500,"position":2},"title":"EM Anton, RE Garc\u00eda, TS Key, JE Blendell, KJ Bowman “Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteric behavior.”\u00a0Journal of Applied Physics. 105(2):024107-024107-8, 2009.","date":"10\/31\/2017","format":false,"excerpt":"EM Anton, RE Garc\u00eda, TS Key, JE Blendell, KJ Bowman \"Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteric behavior.\"\u00a0Journal of Applied Physics. 105(2):024107-024107-8, 2009. Abstract numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":348,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/the-influence-of-grain-boundaries-and-texture-on-ferroelectric-domain-hysteresis\/","url_meta":{"origin":500,"position":3},"title":"R Nath, RE Garc\u00eda, JE Blendell, BD Huey “The influence of grain boundaries and texture on ferroelectric domain hysteresis.”\u00a0JOM Journal of the Minerals, Metals and Materials Society, 59(1):17-21, 2007.","date":"10\/31\/2017","format":false,"excerpt":"R Nath, RE Garc\u00eda, JE Blendell, BD Huey \"The influence of grain boundaries and texture on ferroelectric domain hysteresis.\"\u00a0JOM Journal of the Minerals, Metals and Materials Society, 59(1):17-21, 2007. Abstract As ferroelectric device dimensions continue to shrink, the increasing ratio of boundary to bulk necessitates a thorough understanding of interfacial\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":363,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/crystallographic-texture-optimisation-in-polycrystalline-ferroelectric-films-for-random-access-memory-applications\/","url_meta":{"origin":500,"position":4},"title":"HA Murdoch, RE Garc\u00eda “Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications.”\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009.","date":"10\/31\/2017","format":false,"excerpt":"HA Murdoch, RE Garc\u00eda \"Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications.\"\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009. Abstract The present paper analyses the effect of crystallographic texture on the electromechanical interactions of polycrystalline PZT films. These interactions are responsible for inducing local enhancements\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":436,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/03\/z-zhao-k-bowman-re-garcia-modeling-180-domain-switching-population-dynamics-in-polycrystalline-ferroelectrics-journal-of-the-american-ceramic-society-9551619-1627-2012\/","url_meta":{"origin":500,"position":5},"title":"Z Zhao, K Bowman, RE Garc\u00eda “Modeling 180\u00b0 Domain Switching Population Dynamics in Polycrystalline Ferroelectrics.”\u00a0Journal of the American Ceramic Society. 95(5):1619-1627, 2011.\u00a0","date":"11\/03\/2017","format":false,"excerpt":"Z Zhao, K Bowman, RE Garc\u00eda \"Modeling 180\u00b0 Domain Switching Population Dynamics in Polycrystalline Ferroelectrics.\"\u00a0Journal of the American Ceramic Society. 95(5):1619-1627, 2011. AbstracT The macroscopic hysteretic response associated to the underlying microscopic 180\u00b0 switching of domains in a polycrystalline ferroelectric system is investigated for bipolar, sesquipolar, and unipolar electrical loadings.\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]}],"_links":{"self":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/500"}],"collection":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/comments?post=500"}],"version-history":[{"count":1,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/500\/revisions"}],"predecessor-version":[{"id":501,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/500\/revisions\/501"}],"wp:attachment":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/media?parent=500"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/categories?post=500"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/tags?post=500"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}