{"id":394,"date":"2017-10-31T23:34:10","date_gmt":"2017-10-31T23:34:10","guid":{"rendered":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/?p=394"},"modified":"2017-11-06T21:00:09","modified_gmt":"2017-11-06T21:00:09","slug":"gan-nanostructure-design-for-optimal-dislocation-filtering","status":"publish","type":"post","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/gan-nanostructure-design-for-optimal-dislocation-filtering\/","title":{"rendered":"Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda “GaN nanostructure design for optimal dislocation filtering.”\u00a0Journal of Applied Physics. 108(7):074313, 2010."},"content":{"rendered":"

Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda “GaN nanostructure design for optimal dislocation filtering<\/a>.”\u00a0Journal of Applied Physics.<\/strong> 108(7):074313, 2010.<\/p>\n

Abstract<\/h3>\n

The effect of image forces in GaN pyramidal nanorod structures is investigated to develop dislocation-free light emitting diodes (LEDs). A model based on the eigenstrain method and nonlocal stress is developed to demonstrate that the pyramidal nanorod efficiently ejects dislocations out of the structure. Two possible regimes of filtering behavior are found: (1) cap-dominated and (2) base-dominated. The cap-dominated regime is shown to be the more effective filtering mechanism. Optimal ranges of fabrication parameters that favor a dislocation-free LED are predicted and corroborated by resorting to available experimental evidence. The filtering probability is summarized as a function of practical processing parameters: the nanorod radius and height. The results suggest an optimal nanorod geometry with a radius of \u223c<\/span>50<\/span>b\u00a0<\/span><\/span><\/span><\/span><\/span><\/span>(26 nm) and a height of \u223c<\/span>125<\/span>b<\/span><\/span><\/span><\/span><\/span><\/span> (65 nm), in which b<\/span><\/span><\/span><\/span><\/span> is the magnitude of the Burgers vector for the GaN system studied. A filtering probability of greater than 95% is predicted for the optimal geometry.<\/p>\n","protected":false},"excerpt":{"rendered":"

Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach,…<\/p>\n

Continue reading “Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda “GaN nanostructure design for optimal dislocation filtering.”\u00a0Journal of Applied Physics. 108(7):074313, 2010.”<\/span>…<\/a><\/div>\n
Continue reading \"Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda “GaN nanostructure design for optimal dislocation filtering.”\u00a0Journal of Applied Physics. 108(7):074313, 2010.\"<\/span>…<\/a><\/div>","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"advanced_seo_description":"","jetpack_seo_html_title":"","jetpack_seo_noindex":false,"jetpack_seo_schema_type":"","_jetpack_newsletter_access":"","_jetpack_dont_email_post_to_subs":false,"_jetpack_newsletter_tier_id":0,"_jetpack_memberships_contains_paywalled_content":false,"_jetpack_memberships_contains_paid_content":false,"footnotes":""},"categories":[45],"tags":[59,58],"class_list":["post-394","post","type-post","status-publish","format-standard","hentry","category-papers","tag-dislocations","tag-nanostructures","entry"],"jetpack_featured_media_url":"","jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/peeeSR-6m","jetpack_likes_enabled":true,"jetpack-related-posts":[{"id":387,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/dislocation-filtering-in-gan-nanostructures\/","url_meta":{"origin":394,"position":0},"title":"R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach “Dislocation Filtering in GaN Nanostructures.” \u00a0Nano Letters. 10(5): 1568-1573, 2010.","author":"redwing","date":"10\/31\/2017","format":false,"excerpt":"R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach \"Dislocation Filtering in GaN Nanostructures.\" \u00a0Nano Letters. 10(5): 1568-1573, 2010. Abstract Dislocation filtering in GaN by selective area growth through a nanoporous template is examined both by transmission electron microscopy and numerical modeling. These nanorods grow\u2026","rel":"","context":"In "Papers"","block_context":{"text":"Papers","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/category\/papers\/"},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":389,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/iii-nitride-nanopyramid-light-emitting-diodes-grown-by-organometallic-vapor-phase-epitaxy\/","url_meta":{"origin":394,"position":1},"title":"IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.”\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010.","author":"redwing","date":"10\/31\/2017","format":false,"excerpt":"IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands \"III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.\"\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010. Abstract Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy.\u2026","rel":"","context":"In "Papers"","block_context":{"text":"Papers","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/category\/papers\/"},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":441,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/z-liang-i-wildeson-r-colby-d-ewoldt-t-zhang-t-d-sands-e-stach-b-benes-e-garcia-built-in-electric-field-minimization-in-in-ga-n-nanoheterostructures-nano-letters-11114515-4519\/","url_meta":{"origin":394,"position":2},"title":"Z Liang, I Wildeson, R Colby, D Ewoldt, T Zhang, T D Sands, E Stach, B Benes, E Garc\u00eda “Built-In Electric Field Minimization in (In, Ga) N Nanoheterostructures.” \u00a0Nano Letters. 11(11):4515-4519, 2011.","author":"redwing","date":"11\/04\/2017","format":false,"excerpt":"Z Liang, I Wildeson, R Colby, D Ewoldt, T Zhang, T D Sands, E Stach, B Benes, E Garc\u00eda \"Built-In Electric Field Minimization in (In, Ga) N Nanoheterostructures.\" \u00a0Nano Letters. 11(11):4515-4519, 2011. Abstract (In, Ga)N nanostructures show great promise as the basis for next generation LED lighting technology, for they\u2026","rel":"","context":"In "Papers"","block_context":{"text":"Papers","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/category\/papers\/"},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":1007,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2026\/08\/01\/bo-yang-nicholas-richter-huan-li-zhongxia-shang-zihao-he-hongyi-dou-jianan-shen-r-edwin-garcia-noam-bernstein-c-stephen-hellberg-haiyan-wang-xinghang-zhang-dislocation-enabled-plasticity\/","url_meta":{"origin":394,"position":3},"title":"Bo Yang, Nicholas Richter, Huan Li, Zhongxia Shang, Zihao He, Hongyi Dou, Jianan Shen, R Edwin Garc\u00eda, Noam Bernstein, C Stephen Hellberg, Haiyan Wang, Xinghang Zhang “Dislocation-enabled plasticity in rutile TiO2\u2212x\u00a0at room temperature.” Nanoscale. 17 (35): 20338-20350, 2025.","author":"redwing","date":"08\/01\/2026","format":false,"excerpt":"Bo Yang, Nicholas Richter, Huan Li, Zhongxia Shang, Zihao He, Hongyi Dou, Jianan Shen, R Edwin Garc\u00eda, Noam Bernstein, C Stephen Hellberg, Haiyan Wang, Xinghang Zhang \"Dislocation-enabled plasticity in rutile TiO2\u2212x\u00a0at room temperature.\" Nanoscale. 17 (35): 20338-20350, 2025. https:\/\/doi.org\/10.1039\/d5nr02684a Abstract Ceramics are widely perceived as brittle. Recent research showed that\u2026","rel":"","context":"In "Papers"","block_context":{"text":"Papers","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/category\/papers\/"},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":1013,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2026\/08\/01\/ksn-vikrant-re-garcia-electrically-charged-dislocations-in-ionic-ceramics-acta-materialia-121778-2025\/","url_meta":{"origin":394,"position":4},"title":"KSN Vikrant, RE Garc\u00eda “Electrically charged dislocations in ionic ceramics.” Acta Materialia, 121778, 2025.","author":"redwing","date":"08\/01\/2026","format":false,"excerpt":"KSN Vikrant, RE Garc\u00eda \"Electrically charged dislocations in ionic ceramics.\" Acta Materialia, 121778, 2025. https:\/\/doi.org\/10.1016\/j.actamat.2025.121778 Abstract A thermodynamically consistent phase field theory describing coupled electrical, chemical, and mechanical effects on charged dislocations in ionic ceramics is presented. The formulation results in a generalized multiphysical Peach\u2013K\u00f6hler force, establishing a critical electro-chemo-mechanical\u2026","rel":"","context":"In "Papers"","block_context":{"text":"Papers","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/category\/papers\/"},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":764,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2018\/05\/15\/high-temperature-deformability-of-ductile-flash-sintered-ceramics\/","url_meta":{"origin":394,"position":5},"title":"J. Cho, Q. Li, H. Wang, Z. Fan, J. Li, S. Xue, K. S. N. Vikrant, H. Wang, T. B. Holland, A. K. Mukherjee, R. E. Garc\u00eda, X. Zhang \u201cHigh temperature deformability of ductile flash-sintered ceramics via in-situ compression.\u201d Nature Communications. 9: 2063 (2018).","author":"redwing","date":"05\/15\/2018","format":false,"excerpt":"J. Cho, Q. Li, H. Wang, Z. Fan, J. Li, S. Xue, K. S. N. Vikrant, H. Wang, T. B. Holland, A. K. Mukherjee, R. E. Garc\u00eda, X. Zhang \u201cHigh temperature deformability of ductile flash-sintered ceramics via in-situ compression.\u201d Nature Communications. 9:2063 (2018). https:\/\/doi.org\/10.1038\/s41467-018-04333-2 Abstract Flash sintering has attracted significant\u2026","rel":"","context":"In "Papers"","block_context":{"text":"Papers","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/category\/papers\/"},"img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]}],"_links":{"self":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/394","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/comments?post=394"}],"version-history":[{"count":2,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/394\/revisions"}],"predecessor-version":[{"id":554,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/394\/revisions\/554"}],"wp:attachment":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/media?parent=394"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/categories?post=394"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/tags?post=394"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}