{"id":389,"date":"2017-10-31T23:18:50","date_gmt":"2017-10-31T23:18:50","guid":{"rendered":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/?p=389"},"modified":"2017-11-06T21:01:42","modified_gmt":"2017-11-06T21:01:42","slug":"iii-nitride-nanopyramid-light-emitting-diodes-grown-by-organometallic-vapor-phase-epitaxy","status":"publish","type":"post","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/iii-nitride-nanopyramid-light-emitting-diodes-grown-by-organometallic-vapor-phase-epitaxy\/","title":{"rendered":"IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.”\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010."},"content":{"rendered":"

IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy<\/a>.”\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010.<\/p>\n

Abstract<\/h3>\n
\n
Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth templates via reactive ion etching, eliminating the need for lithographic processes. (In,Ga)N quantum well growth occurs primarily on the six {<\/span>1<\/span>1<\/span>\u00af<\/span><\/span>01<\/span><\/span>}<\/span><\/span><\/span><\/span><\/span>{11\u00af01}<\/span><\/span><\/span> semipolar facets of each of the nanopyramids, while coherent (In,Ga)N quantum dots with heights of up to \u223c<\/span>20<\/span><\/span>nm\u00a0<\/span><\/span><\/span><\/span><\/span><\/span> are incorporated at the apex by controlling growth conditions. Transmission electron microscopy (TEM) indicates that the (In,Ga)N active regions of the nanopyramidheterostructures are completely dislocation-free. Temperature-dependent continuous-wave photoluminescence of nanopyramid heterostructures yields a peak emission wavelength of 617 nm and 605 nm at 300 K and 4 K, respectively. The peak emission energy varies with increasing temperature with a double S-shaped profile, which is attributed to either the presence of two types of InN-rich features within the nanopyramids or a contribution from the commonly observed yellow defect luminescence close to 300 K. TEM cross-sections reveal continuous planar defects in the (In,Ga)N quantum wells and GaN cladding layers grown at 650\u2013780\u2009\u00b0C<\/span><\/span><\/span>, present in 38% of the nanopyramid heterostructures. Plan-view TEMof the planar defects confirms that these defects do not terminate within the nanopyramids.During the growth of p-GaN, the structure of the nanopyramid LEDs changed from pyramidal to a partially coalesced film as the thickness requirements for an undepleted p-GaN layer result in nanopyramid impingement. Continuous-wave electroluminescence of nanopyramid LEDs reveals a 45 nm redshift in comparison to a thin-film LED, suggesting higher InN incorporation in the nanopyramid LEDs. These results strongly encourage future investigations of III-nitride nanoheteroepitaxy as an approach for creating efficient long wavelength LEDs.<\/div>\n<\/div>\n
<\/div>\n","protected":false},"excerpt":{"rendered":"

IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec,…<\/p>\n

Continue reading “IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.”\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010.”<\/span>…<\/a><\/div>\n
Continue reading \"IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.”\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010.\"<\/span>…<\/a><\/div>","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"advanced_seo_description":"","jetpack_publicize_message":"","jetpack_is_tweetstorm":false,"jetpack_publicize_feature_enabled":true},"categories":[45],"tags":[58,53],"jetpack_publicize_connections":[],"jetpack_featured_media_url":"","jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/peeeSR-6h","jetpack_likes_enabled":true,"jetpack-related-posts":[{"id":394,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/gan-nanostructure-design-for-optimal-dislocation-filtering\/","url_meta":{"origin":389,"position":0},"title":"Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda “GaN nanostructure design for optimal dislocation filtering.”\u00a0Journal of Applied Physics. 108(7):074313, 2010.","date":"10\/31\/2017","format":false,"excerpt":"Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda \"GaN nanostructure design for optimal dislocation filtering.\"\u00a0Journal of Applied Physics. 108(7):074313, 2010. Abstract The effect of image forces in GaN pyramidal nanorod structures is investigated to develop dislocation-free light emitting diodes (LEDs). A model based on\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":387,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/dislocation-filtering-in-gan-nanostructures\/","url_meta":{"origin":389,"position":1},"title":"R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach “Dislocation Filtering in GaN Nanostructures.” \u00a0Nano Letters. 10(5): 1568-1573, 2010.","date":"10\/31\/2017","format":false,"excerpt":"R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach \"Dislocation Filtering in GaN Nanostructures.\" \u00a0Nano Letters. 10(5): 1568-1573, 2010. Abstract Dislocation filtering in GaN by selective area growth through a nanoporous template is examined both by transmission electron microscopy and numerical modeling. These nanorods grow\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":441,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/z-liang-i-wildeson-r-colby-d-ewoldt-t-zhang-t-d-sands-e-stach-b-benes-e-garcia-built-in-electric-field-minimization-in-in-ga-n-nanoheterostructures-nano-letters-11114515-4519\/","url_meta":{"origin":389,"position":2},"title":"Z Liang, I Wildeson, R Colby, D Ewoldt, T Zhang, T D Sands, E Stach, B Benes, E Garc\u00eda “Built-In Electric Field Minimization in (In, Ga) N Nanoheterostructures.” \u00a0Nano Letters. 11(11):4515-4519, 2011.","date":"11\/04\/2017","format":false,"excerpt":"Z Liang, I Wildeson, R Colby, D Ewoldt, T Zhang, T D Sands, E Stach, B Benes, E Garc\u00eda \"Built-In Electric Field Minimization in (In, Ga) N Nanoheterostructures.\" \u00a0Nano Letters. 11(11):4515-4519, 2011. Abstract (In, Ga)N nanostructures show great promise as the basis for next generation LED lighting technology, for they\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":464,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/bj-kim-re-garcia-ea-stach-kinetics-of-congruent-vaporization-of-zno-islands-physical-review-letters-10714146101-2011\/","url_meta":{"origin":389,"position":3},"title":"BJ Kim, RE Garc\u00eda, EA Stach “Kinetics of Congruent Vaporization of ZnO Islands.”\u00a0Physical Review Letters. 107(14):146101, 2011.","date":"11\/04\/2017","format":false,"excerpt":"BJ Kim, RE Garc\u00eda, EA Stach \"Kinetics of Congruent Vaporization of ZnO Islands.\"\u00a0Physical Review Letters. 107(14):146101, 2011. Abstract We examine the congruent vaporization of ZnO islands using in\u00a0situ transmission electron microscopy. Correlating quantitative measurements with a theoretical model offers a comprehensive understanding of the equilibrium conditions of the system, including\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":346,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/virtual-piezoforce-microscopy-of-polycrystalline-ferroelectric-films\/","url_meta":{"origin":389,"position":4},"title":"RE Garc\u00eda, BD Huey, JE Blendell “Virtual piezoforce microscopy of polycrystalline ferroelectric films.”\u00a0Journal of applied physics, 100:064105, 2006.","date":"10\/31\/2017","format":false,"excerpt":"RE Garc\u00eda, BD Huey, JE Blendell \"Virtual piezoforce microscopy of polycrystalline ferroelectric films.\"\u00a0Journal of applied physics, 100:064105, 2006. Abstract An innovative methodology is presented that utilizes the experimental results of electron backscattered diffraction to map the crystallographic orientation of each grain, the finite element method to simulate the local grain-grain\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":500,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/y-jing-s-leach-re-garcia-je-blendell-correlated-inter-grain-switching-in-polycrystalline-ferroelectric-thin-films-journal-of-applied-physics-11612124102-2014\/","url_meta":{"origin":389,"position":5},"title":"Y Jing, S Leach, RE Garc\u00eda, JE Blendell “Correlated inter-grain switching in polycrystalline ferroelectric thin films.”\u00a0Journal of Applied Physics, 116(12):124102, 2014.","date":"11\/04\/2017","format":false,"excerpt":"Y Jing, S Leach, RE Garc\u00eda, JE Blendell \"Correlated inter-grain switching in polycrystalline ferroelectric thin films.\"\u00a0Journal of Applied Physics, 116(12):124102, 2014. Abstract Ferroelectric domain switching within individual nanoscale grains of a 100\u2009nm thick polycrystalline PbZr0.2Ti0.8O3 thin film has been shown to depend on the relative crystallographic orientation of the adjacent\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]}],"_links":{"self":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/389"}],"collection":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/comments?post=389"}],"version-history":[{"count":2,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/389\/revisions"}],"predecessor-version":[{"id":556,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/389\/revisions\/556"}],"wp:attachment":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/media?parent=389"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/categories?post=389"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/tags?post=389"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}