{"id":387,"date":"2017-10-31T23:10:01","date_gmt":"2017-10-31T23:10:01","guid":{"rendered":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/?p=387"},"modified":"2017-11-08T00:20:12","modified_gmt":"2017-11-08T00:20:12","slug":"dislocation-filtering-in-gan-nanostructures","status":"publish","type":"post","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/dislocation-filtering-in-gan-nanostructures\/","title":{"rendered":"R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach “Dislocation Filtering in GaN Nanostructures.” \u00a0Nano Letters. 10(5): 1568-1573, 2010."},"content":{"rendered":"

R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach “Dislocation Filtering in GaN Nanostructures<\/a>.” \u00a0Nano Letters<\/strong>. 10(5): 1568-1573, 2010.<\/p>\n

Abstract<\/h3>\n

Dislocation filtering in GaN by selective area growth through a nanoporous template is examined both by transmission electron microscopy and numerical modeling. These nanorods grow epitaxially from the (0001)-oriented GaN underlayer through the \u223c100 nm thick template and naturally terminate with hexagonal pyramid-shaped caps. It is demonstrated that for a certain window of geometric parameters a threading dislocation growing within a GaN nanorod is likely to be excluded by the strong image forces of the nearby free surfaces. Approximately 3000 nanorods were examined in cross-section, including growth through 50 and 80 nm diameter pores. The very few threading dislocations not filtered by the template turn toward a free surface within the nanorod, exiting less than 50 nm past the base of the template. The potential active region for light-emitting diode devices based on these nanorods would have been entirely free of threading dislocations for all samples examined. A greater than 2 orders of magnitude reduction in threading dislocation density can be surmised from a data set of this size. A finite element-based implementation of the eigenstrain model was employed to corroborate the experimentally observed data and examine a larger range of potential nanorod geometries, providing a simple map of the different regimes of dislocation filtering for this class of GaN nanorods. These results indicate that nanostructured semiconductor materials are effective at eliminating deleterious extended defects, as necessary to enhance the optoelectronic performance and device lifetimes compared to conventional planar heterostructures.<\/p>\n","protected":false},"excerpt":{"rendered":"

R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda,…<\/p>\n

Continue reading “R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach “Dislocation Filtering in GaN Nanostructures.” \u00a0Nano Letters. 10(5): 1568-1573, 2010.”<\/span>…<\/a><\/div>\n
Continue reading \"R Colby, Z Liang, IH Wildeson, DA Ewoldt, TD Sands, RE Garc\u00eda, EA Stach “Dislocation Filtering in GaN Nanostructures.” \u00a0Nano Letters. 10(5): 1568-1573, 2010.\"<\/span>…<\/a><\/div>","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"advanced_seo_description":"","jetpack_publicize_message":"","jetpack_is_tweetstorm":false,"jetpack_publicize_feature_enabled":true},"categories":[45],"tags":[59,58],"jetpack_publicize_connections":[],"jetpack_featured_media_url":"","jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/peeeSR-6f","jetpack_likes_enabled":true,"jetpack-related-posts":[{"id":394,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/gan-nanostructure-design-for-optimal-dislocation-filtering\/","url_meta":{"origin":387,"position":0},"title":"Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda “GaN nanostructure design for optimal dislocation filtering.”\u00a0Journal of Applied Physics. 108(7):074313, 2010.","date":"10\/31\/2017","format":false,"excerpt":"Z Liang, R Colby, IH Wildeson, DA Ewoldt, TD Sands, EA Stach, RE Garc\u00eda \"GaN nanostructure design for optimal dislocation filtering.\"\u00a0Journal of Applied Physics. 108(7):074313, 2010. Abstract The effect of image forces in GaN pyramidal nanorod structures is investigated to develop dislocation-free light emitting diodes (LEDs). A model based on\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":389,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/iii-nitride-nanopyramid-light-emitting-diodes-grown-by-organometallic-vapor-phase-epitaxy\/","url_meta":{"origin":387,"position":1},"title":"IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.”\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010.","date":"10\/31\/2017","format":false,"excerpt":"IH Wildeson, R Colby, DA Ewoldt, Z Liang, DN Zakharov, NJ Zaluzec, RE Garc\u00eda, EA Stach, TD Sands \"III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy.\"\u00a0Journal of Applied Physics. 108:\u00a0044303, 2010. Abstract Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy.\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":441,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/z-liang-i-wildeson-r-colby-d-ewoldt-t-zhang-t-d-sands-e-stach-b-benes-e-garcia-built-in-electric-field-minimization-in-in-ga-n-nanoheterostructures-nano-letters-11114515-4519\/","url_meta":{"origin":387,"position":2},"title":"Z Liang, I Wildeson, R Colby, D Ewoldt, T Zhang, T D Sands, E Stach, B Benes, E Garc\u00eda “Built-In Electric Field Minimization in (In, Ga) N Nanoheterostructures.” \u00a0Nano Letters. 11(11):4515-4519, 2011.","date":"11\/04\/2017","format":false,"excerpt":"Z Liang, I Wildeson, R Colby, D Ewoldt, T Zhang, T D Sands, E Stach, B Benes, E Garc\u00eda \"Built-In Electric Field Minimization in (In, Ga) N Nanoheterostructures.\" \u00a0Nano Letters. 11(11):4515-4519, 2011. Abstract (In, Ga)N nanostructures show great promise as the basis for next generation LED lighting technology, for they\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":464,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/bj-kim-re-garcia-ea-stach-kinetics-of-congruent-vaporization-of-zno-islands-physical-review-letters-10714146101-2011\/","url_meta":{"origin":387,"position":3},"title":"BJ Kim, RE Garc\u00eda, EA Stach “Kinetics of Congruent Vaporization of ZnO Islands.”\u00a0Physical Review Letters. 107(14):146101, 2011.","date":"11\/04\/2017","format":false,"excerpt":"BJ Kim, RE Garc\u00eda, EA Stach \"Kinetics of Congruent Vaporization of ZnO Islands.\"\u00a0Physical Review Letters. 107(14):146101, 2011. Abstract We examine the congruent vaporization of ZnO islands using in\u00a0situ transmission electron microscopy. Correlating quantitative measurements with a theoretical model offers a comprehensive understanding of the equilibrium conditions of the system, including\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":434,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/03\/m-abdul-massih-b-benes-t-zhang-c-platzer-w-leavenworth-h-zhuo-e-garcia-z-liang-augmenting-heteronanostructure-visualization-with-haptic-feedback-advances-in-visual-computing-627-636\/","url_meta":{"origin":387,"position":4},"title":"M. Abdul-Massih, B Bene\u0161, T Zhang, C Platzer, W Leavenworth, H Zhuo, E Garc\u00eda, Z Liang “Augmenting heteronanostructure visualization with haptic feedback.”\u00a0Advances in Visual Computing. 627-636, 2011.","date":"11\/03\/2017","format":false,"excerpt":"M. Abdul-Massih, B Bene\u0161, T Zhang, C Platzer, W Leavenworth, H Zhuo, E Garc\u00eda, Z Liang \"Augmenting heteronanostructure visualization with haptic feedback.\"\u00a0Advances in Visual Computing. 627-636, 2011. Abstract We address the need of researchers in nanotechnology who desire an increased level of perceptualization of their simulation data by adding haptic\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":764,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2018\/05\/15\/high-temperature-deformability-of-ductile-flash-sintered-ceramics\/","url_meta":{"origin":387,"position":5},"title":"J. Cho, Q. Li, H. Wang, Z. Fan, J. Li, S. Xue, K. S. N. Vikrant, H. Wang, T. B. Holland, A. K. Mukherjee, R. E. Garc\u00eda, X. Zhang \u201cHigh temperature deformability of ductile flash-sintered ceramics via in-situ compression.\u201d Nature Communications. 9: 2063 (2018).","date":"05\/15\/2018","format":false,"excerpt":"J. Cho, Q. Li, H. Wang, Z. Fan, J. Li, S. Xue, K. S. N. Vikrant, H. Wang, T. B. Holland, A. K. Mukherjee, R. E. Garc\u00eda, X. Zhang \u201cHigh temperature deformability of ductile flash-sintered ceramics via in-situ compression.\u201d Nature Communications. 9:2063 (2018). https:\/\/doi.org\/10.1038\/s41467-018-04333-2 Abstract Flash sintering has attracted significant\u2026","rel":"","context":"In "Papers"","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]}],"_links":{"self":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/387"}],"collection":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/comments?post=387"}],"version-history":[{"count":2,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/387\/revisions"}],"predecessor-version":[{"id":557,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/387\/revisions\/557"}],"wp:attachment":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/media?parent=387"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/categories?post=387"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/tags?post=387"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}