{"id":363,"date":"2017-10-31T19:25:49","date_gmt":"2017-10-31T19:25:49","guid":{"rendered":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/?p=363"},"modified":"2017-11-08T00:23:56","modified_gmt":"2017-11-08T00:23:56","slug":"crystallographic-texture-optimisation-in-polycrystalline-ferroelectric-films-for-random-access-memory-applications","status":"publish","type":"post","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/crystallographic-texture-optimisation-in-polycrystalline-ferroelectric-films-for-random-access-memory-applications\/","title":{"rendered":"HA Murdoch, RE Garc\u00eda &#8220;Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications.&#8221;\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009."},"content":{"rendered":"<p>HA Murdoch, RE Garc\u00eda &#8220;<a class=\"gsc_vcd_title_link\" href=\"http:\/\/www.inderscienceonline.com\/doi\/abs\/10.1504\/IJMPT.2009.025683\" target=\"_blank\" rel=\"noopener\" data-clk=\"hl=en&amp;sa=T&amp;ei=BeD4WbL5DJHAmgGj3xA\">Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications<\/a>.&#8221;\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009.<\/p>\n<h3>Abstract<\/h3>\n<div class=\"hlFld-Abstract\">\n<div class=\"abstractSection abstractInFull\">\n<p>The present paper analyses the effect of crystallographic texture on the electromechanical interactions of polycrystalline PZT films. These interactions are responsible for inducing local enhancements of the remnant polarisation. Built-in stresses and electric fields are responsible for asymmetries in the local shape of the hysteretic loop that are as large as 25% in the coercive field and 10% in the out-of-plane remnant polarisation. Simulations show two types of 180\u00b0 domain walls are favoured: stress-free and mechanically tensile polarisation interfaces. For [001] fibre textured grains a texture of 37 MRDs (r = 0.3) will maximise the performance of individual memory units.<\/p>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p class=\"post-excerpt\" class=\"post-excerpt\">HA Murdoch, RE Garc\u00eda &#8220;Crystallographic texture optimisation in polycrystalline ferroelectric films for&hellip;<\/p>\n<div class=\"link-more\"><a href=\"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/crystallographic-texture-optimisation-in-polycrystalline-ferroelectric-films-for-random-access-memory-applications\/\">Continue reading<span class=\"screen-reader-text\"> &#8220;HA Murdoch, RE Garc\u00eda &#8220;Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications.&#8221;\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009.&#8221;<\/span>&hellip;<\/a><\/div>\n<div class=\"link-more\"><a href=\"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/crystallographic-texture-optimisation-in-polycrystalline-ferroelectric-films-for-random-access-memory-applications\/\">Continue reading<span class=\"screen-reader-text\"> \"HA Murdoch, RE Garc\u00eda &#8220;Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications.&#8221;\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009.\"<\/span>&hellip;<\/a><\/div>","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"advanced_seo_description":"","jetpack_publicize_message":"","jetpack_is_tweetstorm":false,"jetpack_publicize_feature_enabled":true},"categories":[45],"tags":[11,10,14,48],"jetpack_publicize_connections":[],"jetpack_featured_media_url":"","jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/peeeSR-5R","jetpack_likes_enabled":true,"jetpack-related-posts":[{"id":346,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/virtual-piezoforce-microscopy-of-polycrystalline-ferroelectric-films\/","url_meta":{"origin":363,"position":0},"title":"RE Garc\u00eda, BD Huey, JE Blendell &#8220;Virtual piezoforce microscopy of polycrystalline ferroelectric films.&#8221;\u00a0Journal of applied physics, 100:064105, 2006.","date":"10\/31\/2017","format":false,"excerpt":"RE Garc\u00eda, BD Huey, JE Blendell \"Virtual piezoforce microscopy of polycrystalline ferroelectric films.\"\u00a0Journal of applied physics, 100:064105, 2006. Abstract An innovative methodology is presented that utilizes the experimental results of electron backscattered diffraction to map the crystallographic orientation of each grain, the finite element method to simulate the local grain-grain\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":500,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/y-jing-s-leach-re-garcia-je-blendell-correlated-inter-grain-switching-in-polycrystalline-ferroelectric-thin-films-journal-of-applied-physics-11612124102-2014\/","url_meta":{"origin":363,"position":1},"title":"Y Jing, S Leach, RE Garc\u00eda, JE Blendell &#8220;Correlated inter-grain switching in polycrystalline ferroelectric thin films.&#8221;\u00a0Journal of Applied Physics, 116(12):124102, 2014.","date":"11\/04\/2017","format":false,"excerpt":"Y Jing, S Leach, RE Garc\u00eda, JE Blendell \"Correlated inter-grain switching in polycrystalline ferroelectric thin films.\"\u00a0Journal of Applied Physics, 116(12):124102, 2014. Abstract Ferroelectric domain switching within individual nanoscale grains of a 100\u2009nm thick polycrystalline PbZr0.2Ti0.8O3 thin film has been shown to depend on the relative crystallographic orientation of the adjacent\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":352,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/correlations-between-the-crystallographic-texture-and-grain-boundary-character-in-polycrystalline-materials\/","url_meta":{"origin":363,"position":2},"title":"RE Garc\u00eda, MD Vaudin &#8220;Correlations between the crystallographic texture and grain boundary character in polycrystalline materials.&#8221;\u00a0Acta Materialia. 55(17):5728-5732, 2007.","date":"10\/31\/2017","format":false,"excerpt":"RE Garc\u00eda, MD Vaudin \"Correlations between the crystallographic texture and grain boundary character in polycrystalline materials.\"\u00a0Acta Materialia. 55(17):5728-5732, 2007. Abstract A method is presented to determine the misorientation probability distribution function in polycrystalline materials based on a known, analytical or numerical, representation of the associated orientation probability distribution function, i.e.,\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":466,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/d-w-chung-n-balke-s-v-kalinin-re-garcia-virtual-electrochemical-strain-microscopy-of-polycrystalline-licoo2-films-journal-of-the-electrochemical-society-15810a1083-a1089-2011\/","url_meta":{"origin":363,"position":3},"title":"D-W Chung, N Balke, S V Kalinin, RE Garc\u00eda &#8220;Virtual Electrochemical Strain Microscopy of Polycrystalline LiCoO2 Films.&#8221;\u00a0Journal of The Electrochemical Society. 158(10):A1083-A1089, 2011.","date":"11\/04\/2017","format":false,"excerpt":"D-W Chung, N Balke, S V Kalinin, RE Garc\u00eda \"Virtual Electrochemical Strain Microscopy of Polycrystalline LiCoO2 Films.\"\u00a0Journal of The Electrochemical Society. 158(10):A1083-A1089, 2011. Abstract A recently developed technique, electrochemical strain microscopy (ESM), utilizes the strong coupling between ionic current and anisotropic volumetric chemical expansion of lithium-ion electrode materials to dynamically\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":385,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/collective-dynamics-in-nanostructured-polycrystalline-ferroelectric-thin-films-using-local-time-resolved-measurements-and-switching-spectroscopy\/","url_meta":{"origin":363,"position":4},"title":"S Wicks, K Seal, S Jesse, V Anbusathaiah, S Leach, RE Garc\u00eda, S V Kalinin, V Nagarajan &#8220;Collective dynamics in nanostructured polycrystalline ferroelectric thin films using local time-resolved measurements and switching spectroscopy.&#8221; \u00a0Acta Materialia. 58(1):67-75, 2010.","date":"10\/31\/2017","format":false,"excerpt":"S Wicks, K Seal, S Jesse, V Anbusathaiah, S Leach, RE Garc\u00eda, S V Kalinin, V Nagarajan \"Collective dynamics in nanostructured polycrystalline ferroelectric thin films using local time-resolved measurements and switching spectroscopy.\" \u00a0Acta Materialia. 58(1):67-75, 2010. Abstract Grain-to-grain long-range interactions and the ensuing collective dynamics in the domain behavior of\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":439,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/03\/se-leach-re-garcia-v-nagarajan-edge-and-finite-size-effects-in-polycrystalline-ferroelectrics-acta-materialia-591191-201-2011\/","url_meta":{"origin":363,"position":5},"title":"SE Leach, RE Garc\u00eda, V Nagarajan &#8220;Edge and finite size effects in polycrystalline ferroelectrics.&#8221; Acta Materialia. 59(1):191-201, 2011.","date":"11\/03\/2017","format":false,"excerpt":"SE Leach, RE Garc\u00eda, V Nagarajan \"Edge and finite size effects in polycrystalline ferroelectrics.\" Acta Materialia. 59(1):191-201, 2011. Abstract This paper proposes a method to engineer the effects of mesa aspect ratio on polarization switching for single-crystal and polycrystalline PZT nanostructures. The out-of-plane polarization switching of single-crystal and polycrystalline structures\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]}],"_links":{"self":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/363"}],"collection":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/comments?post=363"}],"version-history":[{"count":2,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/363\/revisions"}],"predecessor-version":[{"id":564,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/363\/revisions\/564"}],"wp:attachment":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/media?parent=363"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/categories?post=363"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/tags?post=363"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}