{"id":361,"date":"2017-10-31T19:22:42","date_gmt":"2017-10-31T19:22:42","guid":{"rendered":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/?p=361"},"modified":"2017-11-08T00:24:14","modified_gmt":"2017-11-08T00:24:14","slug":"domain-switching-mechanisms-in-polycrystalline-ferroelectrics-with-asymmetric-hysteretic-behavior","status":"publish","type":"post","link":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/domain-switching-mechanisms-in-polycrystalline-ferroelectrics-with-asymmetric-hysteretic-behavior\/","title":{"rendered":"EM Anton, RE Garc\u00eda, TS Key, JE Blendell, KJ Bowman &#8220;Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteric behavior.&#8221;\u00a0Journal of Applied Physics. 105(2):024107-024107-8, 2009."},"content":{"rendered":"<p>EM Anton, RE Garc\u00eda, TS Key, JE Blendell, KJ Bowman &#8220;<a class=\"gsc_vcd_title_link\" href=\"http:\/\/aip.scitation.org\/doi\/abs\/10.1063\/1.3068333\" target=\"_blank\" rel=\"noopener\" data-clk=\"hl=en&amp;sa=T&amp;ei=Ct_4WcfhGpHAmgGj3xA\">Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteric behavior<\/a>.&#8221;\u00a0<strong>Journal of Applied Physics<\/strong>. 105(2):024107-024107-8, 2009.<\/p>\n<h3>Abstract<\/h3>\n<p>numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) <i>simple switching<\/i>, where the <span class=\"equationTd inline-formula\"><span id=\"MathJax-Element-3-Frame\" class=\"MathJax\" style=\"display: inline; font-style: normal; font-weight: normal; line-height: normal; font-size: 20px; text-indent: 0px; text-align: left; text-transform: none; letter-spacing: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;\" tabindex=\"0\" role=\"presentation\" data-mathml=\"&lt;math xmlns=&quot;http:\/\/www.w3.org\/1998\/Math\/MathML&quot; display=&quot;inline&quot; overflow=&quot;scroll&quot; altimg=&quot;eq-00001.gif&quot;&gt;&lt;mi&gt;c&lt;\/mi&gt;&lt;\/math&gt;\"><span id=\"MathJax-Span-40\" class=\"math\"><span id=\"MathJax-Span-41\" class=\"mrow\"><span id=\"MathJax-Span-42\" class=\"mi\">c<\/span><\/span><\/span><span class=\"MJX_Assistive_MathML\" role=\"presentation\">c<\/span><\/span><\/span>-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) <i>grain boundary induced switching<\/i>, where the domain\u2019s switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and the local piezoelectric contributions to polarization from the surrounding material; (3) <i>negative poling<\/i>, where abutting ferroelectric domains of opposite polarity actively oppose domain switching by increasing their degree of tetragonality by interacting with the surrounding domains that have already switched to align with the applied electrostatic field. Finally, (4) <i>domain reswitching mechanism<\/i> is observed at very large applied electric fields, and is characterized by the appearance of polarization domain reversals events in the direction of their originally unswitched state. This mechanism is a consequence of the competition between the macroscopic applied electric field, and the induced electric field that results from the neighboring domains (or grains) interactions. The model shows that these built-in electromechanical fields and mesoscale mechanisms contribute to the asymmetry of the macroscopic hysteretic behavior in poled samples. Furthermore, below a material-dependent operating temperature, the predicted built-in electric fields can potentially drive the aging and electrical fatigue of the system to further skew the shape of the hysteresis loops.<\/p>\n","protected":false},"excerpt":{"rendered":"<p class=\"post-excerpt\" class=\"post-excerpt\">EM Anton, RE Garc\u00eda, TS Key, JE Blendell, KJ Bowman &#8220;Domain switching&hellip;<\/p>\n<div class=\"link-more\"><a href=\"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/domain-switching-mechanisms-in-polycrystalline-ferroelectrics-with-asymmetric-hysteretic-behavior\/\">Continue reading<span class=\"screen-reader-text\"> &#8220;EM Anton, RE Garc\u00eda, TS Key, JE Blendell, KJ Bowman &#8220;Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteric behavior.&#8221;\u00a0Journal of Applied Physics. 105(2):024107-024107-8, 2009.&#8221;<\/span>&hellip;<\/a><\/div>\n<div class=\"link-more\"><a href=\"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/domain-switching-mechanisms-in-polycrystalline-ferroelectrics-with-asymmetric-hysteretic-behavior\/\">Continue reading<span class=\"screen-reader-text\"> \"EM Anton, RE Garc\u00eda, TS Key, JE Blendell, KJ Bowman &#8220;Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteric behavior.&#8221;\u00a0Journal of Applied Physics. 105(2):024107-024107-8, 2009.\"<\/span>&hellip;<\/a><\/div>","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"advanced_seo_description":"","jetpack_publicize_message":"","jetpack_is_tweetstorm":false,"jetpack_publicize_feature_enabled":true},"categories":[45],"tags":[11,10,14,48],"jetpack_publicize_connections":[],"jetpack_featured_media_url":"","jetpack_sharing_enabled":true,"jetpack_shortlink":"https:\/\/wp.me\/peeeSR-5P","jetpack_likes_enabled":true,"jetpack-related-posts":[{"id":500,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/04\/y-jing-s-leach-re-garcia-je-blendell-correlated-inter-grain-switching-in-polycrystalline-ferroelectric-thin-films-journal-of-applied-physics-11612124102-2014\/","url_meta":{"origin":361,"position":0},"title":"Y Jing, S Leach, RE Garc\u00eda, JE Blendell &#8220;Correlated inter-grain switching in polycrystalline ferroelectric thin films.&#8221;\u00a0Journal of Applied Physics, 116(12):124102, 2014.","date":"11\/04\/2017","format":false,"excerpt":"Y Jing, S Leach, RE Garc\u00eda, JE Blendell \"Correlated inter-grain switching in polycrystalline ferroelectric thin films.\"\u00a0Journal of Applied Physics, 116(12):124102, 2014. Abstract Ferroelectric domain switching within individual nanoscale grains of a 100\u2009nm thick polycrystalline PbZr0.2Ti0.8O3 thin film has been shown to depend on the relative crystallographic orientation of the adjacent\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":436,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/11\/03\/z-zhao-k-bowman-re-garcia-modeling-180-domain-switching-population-dynamics-in-polycrystalline-ferroelectrics-journal-of-the-american-ceramic-society-9551619-1627-2012\/","url_meta":{"origin":361,"position":1},"title":"Z Zhao, K Bowman, RE Garc\u00eda &#8220;Modeling 180\u00b0 Domain Switching Population Dynamics in Polycrystalline Ferroelectrics.&#8221;\u00a0Journal of the American Ceramic Society. 95(5):1619-1627, 2011.\u00a0","date":"11\/03\/2017","format":false,"excerpt":"Z Zhao, K Bowman, RE Garc\u00eda \"Modeling 180\u00b0 Domain Switching Population Dynamics in Polycrystalline Ferroelectrics.\"\u00a0Journal of the American Ceramic Society. 95(5):1619-1627, 2011. AbstracT The macroscopic hysteretic response associated to the underlying microscopic 180\u00b0 switching of domains in a polycrystalline ferroelectric system is investigated for bipolar, sesquipolar, and unipolar electrical loadings.\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":346,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/virtual-piezoforce-microscopy-of-polycrystalline-ferroelectric-films\/","url_meta":{"origin":361,"position":2},"title":"RE Garc\u00eda, BD Huey, JE Blendell &#8220;Virtual piezoforce microscopy of polycrystalline ferroelectric films.&#8221;\u00a0Journal of applied physics, 100:064105, 2006.","date":"10\/31\/2017","format":false,"excerpt":"RE Garc\u00eda, BD Huey, JE Blendell \"Virtual piezoforce microscopy of polycrystalline ferroelectric films.\"\u00a0Journal of applied physics, 100:064105, 2006. Abstract An innovative methodology is presented that utilizes the experimental results of electron backscattered diffraction to map the crystallographic orientation of each grain, the finite element method to simulate the local grain-grain\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":385,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/collective-dynamics-in-nanostructured-polycrystalline-ferroelectric-thin-films-using-local-time-resolved-measurements-and-switching-spectroscopy\/","url_meta":{"origin":361,"position":3},"title":"S Wicks, K Seal, S Jesse, V Anbusathaiah, S Leach, RE Garc\u00eda, S V Kalinin, V Nagarajan &#8220;Collective dynamics in nanostructured polycrystalline ferroelectric thin films using local time-resolved measurements and switching spectroscopy.&#8221; \u00a0Acta Materialia. 58(1):67-75, 2010.","date":"10\/31\/2017","format":false,"excerpt":"S Wicks, K Seal, S Jesse, V Anbusathaiah, S Leach, RE Garc\u00eda, S V Kalinin, V Nagarajan \"Collective dynamics in nanostructured polycrystalline ferroelectric thin films using local time-resolved measurements and switching spectroscopy.\" \u00a0Acta Materialia. 58(1):67-75, 2010. Abstract Grain-to-grain long-range interactions and the ensuing collective dynamics in the domain behavior of\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":348,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/the-influence-of-grain-boundaries-and-texture-on-ferroelectric-domain-hysteresis\/","url_meta":{"origin":361,"position":4},"title":"R Nath, RE Garc\u00eda, JE Blendell, BD Huey &#8220;The influence of grain boundaries and texture on ferroelectric domain hysteresis.&#8221;\u00a0JOM Journal of the Minerals, Metals and Materials Society, 59(1):17-21, 2007.","date":"10\/31\/2017","format":false,"excerpt":"R Nath, RE Garc\u00eda, JE Blendell, BD Huey \"The influence of grain boundaries and texture on ferroelectric domain hysteresis.\"\u00a0JOM Journal of the Minerals, Metals and Materials Society, 59(1):17-21, 2007. Abstract As ferroelectric device dimensions continue to shrink, the increasing ratio of boundary to bulk necessitates a thorough understanding of interfacial\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]},{"id":363,"url":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/2017\/10\/31\/crystallographic-texture-optimisation-in-polycrystalline-ferroelectric-films-for-random-access-memory-applications\/","url_meta":{"origin":361,"position":5},"title":"HA Murdoch, RE Garc\u00eda &#8220;Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications.&#8221;\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009.","date":"10\/31\/2017","format":false,"excerpt":"HA Murdoch, RE Garc\u00eda \"Crystallographic texture optimisation in polycrystalline ferroelectric films for Random Access Memory applications.\"\u00a0International Journal of Materials and Product Technology. 35(3-4):293-310, 2009. Abstract The present paper analyses the effect of crystallographic texture on the electromechanical interactions of polycrystalline PZT films. These interactions are responsible for inducing local enhancements\u2026","rel":"","context":"In &quot;Papers&quot;","img":{"alt_text":"","src":"","width":0,"height":0},"classes":[]}],"_links":{"self":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/361"}],"collection":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/comments?post=361"}],"version-history":[{"count":2,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/361\/revisions"}],"predecessor-version":[{"id":565,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/posts\/361\/revisions\/565"}],"wp:attachment":[{"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/media?parent=361"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/categories?post=361"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/engineering.purdue.edu\/ComputationalMaterials\/index.php\/wp-json\/wp\/v2\/tags?post=361"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}